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2-GHz-Mixer
PMB 2330
Preliminary Data Features
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Bipolar IC
Few external components Low noise Low spurious signal content High conversion transconductance Very highly isolated RF, IF and LO ports Good suppression of input signals at output Wide range of supply voltage P-DSO-8-1
Applications
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Cellular radio mixer Cordless telephone mixer UHF transceivers RF data links HF/VHF/UHF frequency conversion
Type PMB 2330 PMB 2330T
Version V1.1 V1.2
Ordering Code Q67000-A6045 Q67000-A6103
Package P-DSO-8-1 (SMD) P-DSO-8-1 (SMD)
The PMB 2330 is a low power, monolithic, double balanced mixer similar to S 042 P and TBB 042 G for frequencies up to 2 GHz. Circuit Description The pins RF (7) and RF (8) are low resistance inputs of the base coupled difference stage. The resistor of at least 200 may be connected between pins 7 and 6 (ground) and between 8 and 6 to increase the currents (max. 4 mA per pin) and thus the conversion transductance. The pins LO (4) and LO (5) are the local oscillator inputs of the mixer. The connections to the mixer inputs may be symmetrical or asymmetrical coupled, capacitive or inductive coupled. The mixer outputs MO (1) and MO (2) are high impedance open-collector outputs for frequencies up to 2 GHz.
Semiconductor Group
1
01.94
PMB 2330
Pin Configuration (top view)
Pin Definitions and Functions Pin No. 1 2 3 4 5 6 7 8 Symbol MO MO Function Mixer output Mixer output Supply voltage Oscillator input Oscillator input Ground Mixer input Mixer input
VS
LO LO GND RF RF
Semiconductor Group
2
PMB 2330
Block Diagram Semiconductor Group 3
PMB 2330
Electrical Characteristics Absolute Maximum Ratings TA = - 40 to 85 C Parameter Supply voltage Mixer output Oscillator input Mixer input Junction temperature Storage temperature Thermal resistance Symbol Limit Values min. typ. 8 8 2.5 3.5 150 - 40 125 185 V V V V C C K/W open collector 0 1 0 0.8 Unit Remarks
VS V1,2 V4,5 V7,8 Tj Tstg Rth SA
All pins have no additional internal ESD protection circuitry Operational Range Within the operational range the IC operates as described in the circuit description. Supply voltage Input frequency range Ambient temperature in operation
VS fI TA
3 10 - 40
7 2000 85
V MHz C
Semiconductor Group
4
PMB 2330
Characteristics VS = 5 V 10 %; TA = 25 C Parameter Current consumption Output current Output current difference Break down voltage Signal Input RF/RF Input resistance Input inductance Input level Input Intercept point Input frequency Noise figure fRF = 100 MHz, fLO = 145 MHz fRF = 1 GHz, fLO = 1.045 GHz Local Oscillator Input LO/LO Input resistance Input capacitance Input level Input frequency Mixer Output MO/MO Output resistance Output capacitance Power gain fRF = 100 MHz, fLO = 145 MHz fRF = 1 GHz, fLO = 1.045 GHz Intermediate frequency Symbol min. Limit Values typ. 1.6 0.54 60 13 max. mA mA A V Unit Test Condition
IMO + IMO + IVS IMO = IMO
IMO - IMO
VMO, MO
IMO, MO = 8 mA
RRF LRF PRF PIPI fRF N N
0
100 10 0
nH dBm dBm 2.0 GHz dB dB according to test circuit referred to input in series to RRF
-5
6 8
RLO diff RLO diff CLO diff PLO PLO fLO
- 10 -5
3.8 0.6 1.5 10 10 2.0
k k pF dBm dBm GHz
fLO = 100 MHz fLO = 1 GHz
parallel to RLO diff
fLO = 100 MHz fLO = 1 GHz
RMO diff RMO diff CMO diff VP VP fIF
7.0 0.6 1.5 10 10 2.0
k k pF dB dB GHz
fMO = 100 MHz fMO = 1 GHz
parallel to RMO diff
Semiconductor Group
5
PMB 2330
Test Circuit
Semiconductor Group
6
PMB 2330
Plastic Package, P-DSO-8-1 (SMD) (Plastic Dual Small Outline)
Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book "Package Information" SMD = Surface Mounted Device Semiconductor Group 7
Dimensions in mm
GPS05121

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